General |
Interface |
SAS 6/12Gb/s Supports Wide Port @ 12Gb/s |
Capacity (GB) |
~1DW/D: 7.68TB |
Form Factor |
2.5-inch SFF |
Flash Memory Technology |
3D Tri-Level Cell (TLC) NAND |
Performance |
Sequential Read (max MB/s, 128KiB) |
2100 |
Sequential Write (max MB/s, 128KiB) |
1250 |
Random Read (max IOPS, 4KiB) |
400K |
Random Write (max IOPS, 4KiB) |
85K |
Mixed Random Read/Write (max IOPS 70%R/30%W, 4KiB) |
170K |
Latency |
105 μs |
Reliability |
Error Rate (non-recoverable, bits read) |
1 in 10 17 |
MTBF (M hours) |
2.5 |
Annual Failure Rate (AFR) |
0.35% |
Availability (hrs/day x days/wk) |
24x7 |
Limited Warranty (yrs) |
5 years or Max PB written, whichever occurs first |
Endurance (max TB, random write) |
13100 |
Endurance |
~1DW/D |
Power |
Requirement |
+5 VDC, +12VDC |
Operating (W, typical) |
9, 11, 14 |
Idle (W) |
<3.2TB: 3.7, ≥ 3.2TB: 4.7 (max) |
Physical Size |
Z-Height (mm) |
15 |
Dimensions (width x depth, mm) |
70.1 x 100.6 |
Weight (g, max) |
140 |
Environmental (operating) |
Ambient Temperature |
0º to 75º C |
Shock (half-sine wave) |
500G (2ms) |
Vibration (5 to 700 Hz) |
2.16 G RMS, random (XYZ) |
Environmental (non-operating) |
Ambient Temperature |
-40º to 80º C |
Shock (half-sine wave) |
1000G (0.5ms) |