Capacity | 800GB |
Performance | |
Seq. Read (MB/s) | 4,400 |
Seq. Write (MB/s) | 1,000 |
Rand. Read (IOPS) | 230,000 |
Rand. Write (IOPS) | 118,000 |
70/30 Rand. Read/Write (IOPS) | 153,000 |
Latency (TYP, μs) |
85 (read) 15 (write) |
Endurance (total bytes written in TB) |
4,300 8,000 |
Basic Attributes | |
Interface | PCIe Gen4 1x4 NVMe (v1.4) |
Form Factors | M.2 (22 x 80mm) |
NAND | Micron 96-layer 3D TLC NAND |
Typ. Latency | Read: M.2: 85μs, Write: 15μs |
Reliability | |
MTTF | 2 million device hours |
UBER | <1 sector per 1017 bits read |
Warranty | 5 years |
Environmental Characteristics | |
Power |
Sequential read (maximum of all capacities by form factor): M.2: 8.25W Sequential write (maximum of all capacities by form factor): M.2: 8.25W |
Operating Temp. | 0-70°C |