- Power Supply: VDD=1.2V (1.14V to 1.26V)
- VDDQ = 1.2V (1.14V to 1.26V)
- VPP - 2.5V (2.375V to 2.75V)
- VDDSPD=2.25V to 2.75V
- Functionality and operations comply with the DDR4 SDRAM datasheet
- 16 internal banks
- Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
- Data transfer rates: PC4-3200, PC4-2933, 2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
- Bi-Directional Differential Data Strobe
- 8 bit pre-fetch
- Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
- Supports ECC error correction and detection
- On-Die Termination (ODT)
- Temperature sensor with integrated SPD
- This product is in compliance with the RoHS directive.
- Per DRAM Addressability is supported
- Internal Vref DQ level generation is available
- Write CRC is supported at all speed grades
- DBI (Data Bus Inversion) is supported(x8)
- CA parity (Command/Address Parity) mode is supported
Manufacturer | Hynix |
Manufacturer Part # | HMA82GR7AFR8N-VK |
Memory Type | DDR4 SDRAM |
Capacity | 16GB |
Pins | 288 Pin |
Bus Type | PC-21300 |
Error Correction | Registered ECC |
Cycle Time | 0.75ns |
Cas | CL19 |
Data Transfer Rate | 2666MHz |
Rank | Rank 2 |
Voltage | 1.2 |