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16GB HMA82GR7AFR8N-VK Dual-Rank, DDR4 2666MHz, CL19, ECC Registered Memory

  • SKU: 12502246
  • Manufacturer: SK hynix
Starting At
  • Power Supply: VDD=1.2V (1.14V to 1.26V)
  • VDDQ = 1.2V (1.14V to 1.26V)
  • VPP - 2.5V (2.375V to 2.75V)
  • VDDSPD=2.25V to 2.75V
  • Functionality and operations comply with the DDR4 SDRAM datasheet
  • 16 internal banks
  • Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
  • Data transfer rates: PC4-3200, PC4-2933, 2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
  • Bi-Directional Differential Data Strobe
  • 8 bit pre-fetch
  • Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
  • Supports ECC error correction and detection
  • On-Die Termination (ODT)
  • Temperature sensor with integrated SPD
  • This product is in compliance with the RoHS directive.
  • Per DRAM Addressability is supported
  • Internal Vref DQ level generation is available
  • Write CRC is supported at all speed grades
  • DBI (Data Bus Inversion) is supported(x8)
  • CA parity (Command/Address Parity) mode is supported
Manufacturer Hynix
Manufacturer Part # HMA82GR7AFR8N-VK
Memory Type DDR4 SDRAM
Capacity 16GB
Pins 288 Pin
Bus Type PC-21300
Error Correction Registered ECC
Cycle Time 0.75ns
Cas CL19
Data Transfer Rate 2666MHz
Rank Rank 2
Voltage 1.2