Capacity | 500GB |
Features |
• Silicon Motion 3D TLC Flash controller • SLC caching accelerates burst performance • Global wear-leveling evens program/erase counts across data blocks to extend lifespan • StaticDataRefresh technology ensures data integrity • Intelligent garbage collection routines for advanced free space management • NVMe Deallocate support • Host Memory Buffer (HMB) support (OS dependent) • S.M.A.R.T. support • Performance optimized LDPC engine • PCIe revision 3.1 compliant • NVMe protocol 1.3 compliant • PCIe Gen3 x4 • Industry-standard 512 byte sector support • RoHS-compliant package • 3D NAND |
Performance |
• Sequential Read: Up to 2105MB/s • Sequential Write: Up to 1670MB/s • Random Read: Up to 240K IOPS (4K block size) • Random Write: Up to 260K IOPS (4K block size) |
Endurance |
• TBW: Up to 303TB • DWPD: 0.609 (3y) |
Security | • NVMe Security Erase support |
Reliability |
• MTBF: 1.5 million device hours* • Low Density Parity Check (LDPC) ECC • Static and dynamic wear leveling • Uncorrectable Bit Error Rate: <1 sector per 1015 bits read |
Electrical/Mechanical |
• +3.3VDC (±5%) power supply • Power Consumption: up to 5.3W (Active), 0.3W (Idle) • Dimensions: M.2: 22.0 mm x 80.0 mm • Weight: 0.088lb |
Environmental |
• Operating temperature: 0-70°C • Non-Operating temperature: -40-85°C • Operating humidity: 5-95% relative • Shock: 1500G/0.5ms • Vibration: 2-500Hz, 3.1G |
RoHS Compliant | |
TAA Compliant | |
Note: As used for storage capacity, one gigabyte (GB) = one billion bytes. Total accessible capacity varies depending on operating environment. Specifications are subject to change without notice. *Based on Telcordia SR-332 reliability prediction procedure. |