| model | AH660 |
| shape | M.2 2280-S3-M |
| capacity | 512GB |
| Sequential Read | 7100MB/s |
| Sequential Write | 4400MB/s |
| Random Read IOPS (4KB) | 820K |
| Random Write IOPS (4KB) | 680K |
| TLC Sequential Write | 890MB/s |
| TLC Random Write IOPS (4KB) | 235K |
| size | Length 80±0.15mm Width 22±0.15mm Height 2.38mm (maximum) |
| weight | Max 8g |
| Power consumption | L1.2: <5mW Idle: <60mW Operating: <180mW |
| Bus interface | PCIe Gen 4*4 |
| NVMe Standard | NVMe 1.4 |
| temperature | Working temperature: 0?~70? Non-operating: -40?~85? Note: Measured by SMART Temperature and proper airflow recommended. |
| humidity | 5%~95%, no condensation |
| Mean time between failures | 2 million hours |
| Shock | Operation: Half sine wave, 1000G@1ms, 6 sides Non-operating: Half sine wave, [email protected], 6 sides |
| vibration | Working: Random vibration, 5Grms, 2~2000Hz, 3 axes Non-operating: Random vibration, 7Grms, 2~500Hz, 3 axes |
| Supply voltage | 3.3V±5% |
| Ripple/Noise | ≤100mV |