| General | |
| Interface | SAS 6/12Gb/s Supports Wide Port @ 12Gb/s |
| Capacity (GB) | ~1DW/D: 7.68TB |
| Form Factor | 2.5-inch SFF |
| Flash Memory Technology | 3D Tri-Level Cell (TLC) NAND |
| Performance | |
| Sequential Read (max MB/s, 128KiB) | 2100 |
| Sequential Write (max MB/s, 128KiB) | 1250 |
| Random Read (max IOPS, 4KiB) | 400K |
| Random Write (max IOPS, 4KiB) | 85K |
| Mixed Random Read/Write (max IOPS 70%R/30%W, 4KiB) | 170K |
| Latency | 105 μs |
| Reliability | |
| Error Rate (non-recoverable, bits read) | 1 in 10 17 |
| MTBF (M hours) | 2.5 |
| Annual Failure Rate (AFR) | 0.35% |
| Availability (hrs/day x days/wk) | 24x7 |
| Limited Warranty (yrs) | 5 years or Max PB written, whichever occurs first |
| Endurance (max TB, random write) | 13100 |
| Endurance | ~1DW/D |
| Power | |
| Requirement | +5 VDC, +12VDC |
| Operating (W, typical) | 9, 11, 14 |
| Idle (W) | <3.2TB: 3.7, ≥ 3.2TB: 4.7 (max) |
| Physical Size | |
| Z-Height (mm) | 15 |
| Dimensions (width x depth, mm) | 70.1 x 100.6 |
| Weight (g, max) | 140 |
| Environmental (operating) | |
| Ambient Temperature | 0º to 75º C |
| Shock (half-sine wave) | 500G (2ms) |
| Vibration (5 to 700 Hz) | 2.16 G RMS, random (XYZ) |
| Environmental (non-operating) | |
| Ambient Temperature | -40º to 80º C |
| Shock (half-sine wave) | 1000G (0.5ms) |