- Power Supply: VDD = 1.2V
- VDDQ = 1.2V
- VPP = 2.5V
- VDDSPD = 2.20V to 3.60V
- Functionality and operations comply with the DDR4 SDRAM datasheet
- 16 internal banks
- Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
- Data transfer rates: PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
- Bi-Directional Differential Data Strobe
- 8 bit pre-fetch
- Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
- Supports ECC error correction and detection
- On-Die Termination (ODT)
- Temperature sensor with integrated SPD
- This product is in compliance with the RoHS directive.
- Per DRAM Addressability is supported
- Internal Vref DQ level generation is available
- Write CRC is supported at all speed grades
- CA parity (Command/Address Parity) mode is supported
- RoHS Compliant and Halogen-Free
| Brand | Kingston |
| Model | KSM26SES8/8HD |
| Capacity | 8GB |
| Form Factor | SODIMM |
| Type | 260-Pin DDR4 SDRAM |
| Speed | DDR4 2666 |
| CAS Latency | 19 |
| Timing | 19-19-19 |
| Voltage | 1.2V |
| ECC | Yes |
| Buffered/Registered | Unbuffered |
| Rank | 1Rx8 |
| Heat Spreader | No |