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500GB C3400e, 3400 / 2200 MB/s, 3D TLC NAND, PCIe NVMe 3.0 x4, SED, TCG Opal SSC, M.2 2280 SSD - TAA Compliant

Quantity:
  • SKU: 13264086
  • Manufacturer: AXIOM
  • MPN: AXG99553
  • Availability: TEMPORARILY OUT OF STOCK
Starting At
$68.22
Quantity:
Capacity 500GB
Features • Silicon Motion 3D TLC Flash controller
• SLC caching accelerates burst performance
• StaticDataRefresh technology ensures data integrity
• Data shaping increases endurance
• Intelligent garbage collection routines for advanced free space management
• NVMe Deallocate function support (NVMe equivalent of TRIM command)
• S.M.A.R.T. support
• Performance optimized LDPC engine
• PCIe Gen3 x4 NVMe 1.3 interface
• Temperature sensor
• Industry-standard 512 byte sector support
• RoHS-compliant package
• 3D TLC NAND
Performance • Sequential Read: Up to 3400MB/s
• Sequential Write: Up to 2200MB/s
• Random Read: Up to 320K IOPS (4K block size)
• Random Write: Up to 330K IOPS (4K block size)
Endurance • TBW: Up to 688TB
• DWPD: 1.08 (3y)
Security • AES compliant Data Encryption
• IEEE1667 encryption support
• TCG OPAL 2.0 Support
• Self-encrypting drive (SED)
• NVMe Security Erase support
Reliability • MTBF: 1.5 million device hours*
• Built-in Low Density Parity Check (LDPC) ECC
• Global wear-leveling evens program/erase counts across data blocks to extend lifespan
• End-to-end data path protection
• Uncorrectable Bit Error Rate: =1 sector per 1015 bits read
Electrical/Mechanical • +3.3VDC (±5%) power supply
• Power Consumption: up to 5.7W (Active), 0.72W (Idle)
• Dimensions: M.2: 22.0 mm x 80.0 mm
• Weight: 0.088lb
Environmental • Operating temperature: 0-70°C
• Non-Operating temperature: -40-85°C
• Operating humidity: 5-95% relative
• Shock: 1500G/0.5ms
• Vibration: 2-500Hz, 3.1G
RoHS Compliant
TAA Compliant
Note: As used for storage capacity, one gigabyte (GB) = one billion bytes. Total accessible capacity varies depending on operating environment. Specifications are subject to change without notice.
*Based on Telcordia SR-332 reliability prediction procedure.