True Custom Computer Builder specializing in Assembly of Gaming Computers, Laptops, Workstations, Servers
Samsung’s innovative 3D V-NAND flash memory architecture breaksthrough density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.
Brand | SAMSUNG |
---|---|
Series | 850 EVO |
Model | MZ-M5E250BW |
Part Number | MZ-M5E250BW |
Device Type | Internal SSD Single Unit Version |
Form Factor | mSATA |
Capacity | 250GB |
Memory Components | 3D NAND |
Interface | SATA III |
Controller | MGX |
Cache | 0MB |
Max Sequential Read | Up to 540 MBps |
Max Sequential Write | Up to 520 MBps |
4KB Random Read | Up to 97,000 IOPS |
4KB Random Write | Up to 88,000 IOPS |
Features | Dara Migration Software: Yes |
Power Consumption (Idle) | 50mW |
Power Consumption (Active) |
Read: 3.5W Write: 4.3W |
Height | 4.90mm |
Width | 29.90mm |
Depth | 50.80mm |
Weight | 0.02 lb. |